The History we have made so far.


Chapter 8: Microscopy of defects in semiconductors
F. Tuomisto (Ed.): Characterisation and Control of Defects in Semiconductors (IET, London, 2019)
ISBN-13: 978-1-78561-655-6

Piezoelectric III-V and II-VI Semiconductors
Massabuau and Calahorra, Reference Module in Materials Science and Materials Engineering (Elsevier, 2020)
ISBN: 9780128035818


Constant photocurrent method to probe the sub-bandgap absorption in wide bandgap semiconductor films: the case of α-Ga2O3
Nicol et al., physica status solidi (b) 261, 202300470 (2024)
DOI: 10.1002/pssb.202300470

Progress and applications of (Cu–)Ag–Bi–I semiconductors, and their derivatives, as next-generation lead-free materials for photovoltaics, detectors and memristors
Zhu et al., International Materials Reviews 69, 19 (2024)
DOI: 10.1177/09506608231213065

Sub-surface imaging of porous GaN distributed Bragg reflectors via backscattered electrons
Sarkar et al., Microscopy and Microanalysis 30, 208 (2024)
DOI: 10.1093/mam/ozae028

Grain Engineering of Sb2S3 Thin Films to Enable Efficient Planar Solar Cells with High Open-Circuit Voltage
Liu et al., Adv. Mater. 36, 2305841 (2024)
DOI: 10.1002/adma.202305841


Hydrogen-related 3.8 eV UV luminescence in α-Ga2O3
Nicol et al., Appl. Phys. Lett. 122, 062102 (2023)
DOI: 10.1063/5.0135103

Ni/Au contacts to corundum α-Ga2O3
Massabuau et al., Jap. J. Appl. Phys. 62, SF1008 (2023)
DOI: 10.35848/1347-4065/acbc28

Redshift and amplitude increase in the dielectric function of corundum-like α-(TixGa1-x)2O3
Kluth et al., Appl. Phys. Lett. 122, 092101 (2023)
DOI: 10.1063/5.0139725

Air-Stable Bismuth Sulfobromide (BiSBr) Visible-Light Absorbers: Optoelectronic Properties and Potential for Energy Harvesting
Guo et al., J. Mater. Chem. A 11, 22775 (2023)
DOI: 10.1039/D3TA04491B


Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence
Kusch et al., Nanoscale 14, 402 (2022)
DOI: 10.1039/D1NR06088K
Nanoscale 2022 Emerging Investigators


Study of Ti contacts to corundum α-Ga2O3
Massabuau et al., J. Phys. D: Appl. Phys 54, 384001 (2021)
DOI: 10.1088/1361-6463/ac0d28
2021 Emerging Leaders

Progress in atomic layer deposited α-Ga2O3 materials and solar-blind detectors
Massabuau et al., Proc. SPIE 11687, 116870Q (2021)
DOI: 10.1117/12.2588729

Pure single-photon emission from an InGaN/GaN quantum dot
Holmes et al., APL Mater. 9, 061106 (2021)
DOI: 10.1063/5.0049488

Directly correlated microscopy of trench defects in InGaN quantum wells
O’Hanlon et al., Ultramicroscopy XXXX, 113255 (2021)
DOI: 10.1016/j.ultramic.2021.113255

Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced
O’Hanlon et al., Ultramicroscopy XXXX, 113258 (2021)
DOI: 10.1016/j.ultramic.2021.113258

Defect structures in (001) zincblende GaN/3C-SiC nucleation layers
Vacek et al., J. Appl. Phys. 129, 155306 (2021)
DOI: 10.1063/5.0036366

Thermal stress modelling of diamond on GaN/III-Nitride membranes
Cuenca et al., Carbon 174, 647 (2021)
DOI: 10.1016/j.carbon.2020.11.067


Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering
Barthel et al., Micromachines 11, 1128 (2020)
DOI: 10.3390/mi11121128

Sequential plan-view imaging of sub-surface structures in the transmission electron microscope
Massabuau et al., Materialia 12, 100798 (2020)
DOI: 10.1016/j.mtla.2020.100798

Dislocations as channels for the etching of sub-surface porous GaN
Massabuau et al., APL Mater. 8, 031115 (2020)
DOI: 10.1063/1.5142491

Integrated Wafer Scale Growth of Single Crystal Metal Films and High Quality Graphene
Burton et al., ACS Nano 14, 13593 (2020)
DOI: 10.1021/acsnano.0c05685

Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques
O’Hanlon et al., Ultramicroscopy 212, 112970 (2020)
DOI: 10.1016/j.ultramic.2020.112970

Pair suppression caused by mosaic-twist defects in superconducting Sr2RuO4 thin-films prepared using pulsed laser deposition
Palomares Garcia et al., Commun. Mater. 1, 23 (2020)
DOI: 10.1038/s43246-020-0026-1

Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN
Smith et al., Carbon 167, 620 (2020)
DOI: 10.1016/j.carbon.2020.05.050

GaN-on-diamond technology platform: Bonding-free membrane manufacturing process
Smith et al., AIP Adv. 10, 035306 (2020)
DOI: 10.1063/1.5129229

Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond
Field et al., ACS Appl. Mater. Interfaces 12, 54138 (2020)
DOI: 10.1021/acsami.0c10129


Atomic layer deposited α-Ga2O3 solar-blind photodetectors
Moloney et al., J. Phys. D: Appl. Phys. 52, 475101 (2019)
DOI: 10.1088/1361-6463/ab3b76

Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
Roberts et al., J. Cryst. Growth 528, 125524 (2019)
DOI: 10.1016/j.jcrysgro.2019.125254

Optical and structural properties of dislocations in InGaN
Massabuau et al., J. Appl. Phys. 125, 165701 (2019)
DOI: 10.1063/1.5084330

Thick adherent diamond films on AlN with low thermal barrier resistance
Mandal et al., ACS Appl. Mater. Interfaces 11, 40826 (2019)

Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells
Roble et al., Sci. Rep. 9, 18862 (2019)
DOI: 10.1038/s41598-019-53693-2

A Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals
Wang et al., ACS Nano 13, 2114 (2019)
DOI: 10.1021/acsnano.8b08712

Effects of microstructure and growth conditions on quantum emitters in gallium nitride
Nguyen et al., APL Mater. 7, 081106 (2019)
DOI: 10.1063/1.5098794

Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates
Lee et al., J. Cryst. Growth 524, 125167 (2019)
DOI: 10.1016/j.jcrysgro.2019.125167


α-Ga2O3 grown by low temperature atomic layer deposition on sapphire
Roberts et al., J. Cryst. Growth 487 23 (2018)
DOI: 10.1016/j.jcrysgro.2018.02.014