Publications

The History we have made so far.

Book

Chapter 8: Microscopy of defects in semiconductors
F. Tuomisto (Ed.): Characterisation and Control of Defects in Semiconductors (IET, London, 2019)
ISBN-13: 978-1-78561-655-6

2020

Sequential plan-view imaging of sub-surface structures in the transmission electron microscope
Massabuau et al., Materialia 12, 100798 (2020)
DOI: 10.1016/j.mtla.2020.100798


Dislocations as channels for the etching of sub-surface porous GaN
Massabuau et al., APL Mater. 8, 031115 (2020)
DOI: 10.1063/1.5142491


Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques
O’Hanlon et al., Ultramicroscopy 212, 112970 (2020)
DOI: 10.1016/j.ultramic.2020.112970


Pair suppression caused by mosaic-twist defects in superconducting Sr2RuO4 thin-films prepared using pulsed laser deposition
Palomares Garcia et al., Commun. Mater. 1, 23 (2020)
DOI: 10.1038/s43246-020-0026-1


Mixed-size diamond seeding for low-thermal-barrier growth of CVD diamond onto GaN and AlN
Smith et al., Carbon 167, 620 (2020)
DOI: 10.1016/j.carbon.2020.05.050


GaN-on-diamond technology platform: Bonding-free membrane manufacturing process
Smith et al., AIP Adv. 10, 035306 (2020)
DOI: 10.1063/1.5129229

2019

Atomic layer deposited α-Ga2O3 solar-blind photodetectors
Moloney et al., J. Phys. D: Appl. Phys. 52, 475101 (2019)
DOI: 10.1088/1361-6463/ab3b76


Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition
Roberts et al., J. Cryst. Growth 528, 125524 (2019)
DOI: 10.1016/j.jcrysgro.2019.125254


Optical and structural properties of dislocations in InGaN
Massabuau et al., J. Appl. Phys. 125, 165701 (2019)
DOI: 10.1063/1.5084330


Thick adherent diamond films on AlN with low thermal barrier resistance
Mandal et al., ACS Appl. Mater. Interfaces 11, 40826 (2019)
DOI:10.1021/acsami.9b13869


Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells
Roble et al., Sci. Rep. 9, 18862 (2019)
DOI: 10.1038/s41598-019-53693-2


A Peeling Approach for Integrated Manufacturing of Large Monolayer h-BN Crystals
Wang et al., ACS Nano 13, 2114 (2019)
DOI: 10.1021/acsnano.8b08712


Effects of microstructure and growth conditions on quantum emitters in gallium nitride
Nguyen et al., APL Mater. 7, 081106 (2019)
DOI: 10.1063/1.5098794


Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates
Lee et al., J. Cryst. Growth 524, 125167 (2019)
DOI: 10.1016/j.jcrysgro.2019.125167


2018

α-Ga2O3 grown by low temperature atomic layer deposition on sapphire
Roberts et al., J. Cryst. Growth 487 23 (2018)
DOI: 10.1016/j.jcrysgro.2018.02.014